2019³â Ãß°èÇмú´ëȸ
Current Result Document :
ÇѱÛÁ¦¸ñ(Korean Title) |
ÀûÃþÇü 3Â÷¿ø ÁýÀûȸ·Î¿ë Çǵå¹é Àü°è È¿°ú Æ®·£Áö½ºÅÍ ¼³°è |
¿µ¹®Á¦¸ñ(English Title) |
Feedback Field Effect Transistor for Monolithic 3D IC |
ÀúÀÚ(Author) |
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Jong Hyuck Oh
Yun Seop Yu
|
¿ø¹®¼ö·Ïó(Citation) |
VOL 23 NO. 02 PP. 0306 ~ 0307 (2019. 10) |
Çѱ۳»¿ë (Korean Abstract) |
Çǵå¹é Àü°è È¿°ú Æ®·»Áö½ºÅÍ(Feedback Field Effect Transistor; FBFET)·Î ÀûÃþÇü 3Â÷¿ø ÁýÀûȸ·Î¸¦ ¼³°èÇÏ°í, ÇϺο¡ ÀÖ´Â Nä³Î FBFET¿¡ ´ëÇØ Àü·ù-Àü¾Ð Ư¼º°ú È÷½ºÅ׸®½Ã½º Ư¼ºÀÎ ¸Þ¸ð¸® À©µµ¿ì¸¦ °üÂûÇß´Ù. Nä³Î FBFET¸¦ ½Ã°£¿¡ ´ëÇؼ ½Ã¹Ä·¹ÀÌ¼Ç ÇßÀ» ¶§ ±¸µ¿ Àü·ù´Â 1.57¡¿10^(-6)A/§, ¸Þ¸ð¸® À©µµ¿ì´Â 2.4V·Î °üÂûµÆ´Ù. |
¿µ¹®³»¿ë (English Abstract) |
3D monolithic integration chip (IC) was designed using feedback field effect transistor (FBFET). When the N channel FBFET at the bottom was simulated with ramping time(forward/backward), the driving current was observed at 1.57¡¿10^(-6)A/§ and the memory window was observed at 2.4V |
Å°¿öµå(Keyword) |
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