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Çмú´ëȸ ÇÁ·Î½Ãµù

Ȩ Ȩ > ¿¬±¸¹®Çå > Çмú´ëȸ ÇÁ·Î½Ãµù > Çѱ¹Á¤º¸Åë½ÅÇÐȸ Çмú´ëȸ > 2019³â Ãß°èÇмú´ëȸ

2019³â Ãß°èÇмú´ëȸ

Current Result Document :

ÇѱÛÁ¦¸ñ(Korean Title) ÀûÃþÇü 3Â÷¿ø ÁýÀûȸ·Î¿ë Çǵå¹é Àü°è È¿°ú Æ®·£Áö½ºÅÍ ¼³°è
¿µ¹®Á¦¸ñ(English Title) Feedback Field Effect Transistor for Monolithic 3D IC
ÀúÀÚ(Author) ¿ÀÁ¾Çõ   À¯À±¼·   Jong Hyuck Oh   Yun Seop Yu  
¿ø¹®¼ö·Ïó(Citation) VOL 23 NO. 02 PP. 0306 ~ 0307 (2019. 10)
Çѱ۳»¿ë
(Korean Abstract)
Çǵå¹é Àü°è È¿°ú Æ®·»Áö½ºÅÍ(Feedback Field Effect Transistor; FBFET)·Î ÀûÃþÇü 3Â÷¿ø ÁýÀûȸ·Î¸¦ ¼³°èÇÏ°í, ÇϺο¡ ÀÖ´Â Nä³Î FBFET¿¡ ´ëÇØ Àü·ù-Àü¾Ð Ư¼º°ú È÷½ºÅ׸®½Ã½º Ư¼ºÀÎ ¸Þ¸ð¸® À©µµ¿ì¸¦ °üÂûÇß´Ù. Nä³Î FBFET¸¦ ½Ã°£¿¡ ´ëÇؼ­ ½Ã¹Ä·¹ÀÌ¼Ç ÇßÀ» ¶§ ±¸µ¿ Àü·ù´Â 1.57¡¿10^(-6)A/§­, ¸Þ¸ð¸® À©µµ¿ì´Â 2.4V·Î °üÂûµÆ´Ù.
¿µ¹®³»¿ë
(English Abstract)
3D monolithic integration chip (IC) was designed using feedback field effect transistor (FBFET). When the N channel FBFET at the bottom was simulated with ramping time(forward/backward), the driving current was observed at 1.57¡¿10^(-6)A/§­ and the memory window was observed at 2.4V
Å°¿öµå(Keyword) Çǵå¹é Àü°è È¿°ú Æ®·£Áö½ºÅÍ   3Â÷¿ø ÀûÃþÇü ÁýÀûȸ·Î   ¸Þ¸ð¸® À©µµ¿ì  
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