| 한글제목(Korean Title) |
One-Dimensional Analytical Model of LShaped Tunnel Field-Effect Transistor |
| 영문제목(English Title) |
One-Dimensional Analytical Model of LShaped Tunnel Field-Effect Transistor |
| 저자(Author) |
Yun Seop Yu
Nam Ho Kim
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| 원문수록처(Citation) |
VOL 11 NO. 01 PP. 0162 ~ 0164 (2019. 06) |
한글내용
(Korean Abstract) |
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영문내용
(English Abstract) |
One-dimensional (1D) analytical model of L-shaped tunnel field-effect transistor (L-TFET) is introduced. In this model, 1D potential is derived from 1D Poisson equation in the intrinsic channel and source by applying a depletion approximation and boundary conditions. Applying the tunneling length obtained from the potential to Kane band-to-band tunneling (BTBT) model, drain currents can be derived. The proposed model can be well satisfied at the relatively high gate bias. The proposed model is in reasonable agreement with the TCAD simulation.
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| 키워드(Keyword) |
L-shaped TFET
potential
Poisson equation
band-to-band tunneling
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| 파일첨부 |
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