| 한글제목(Korean Title) |
NAND-Flash Memory Reliability and Power Consumption Issues Overcoming Technique in Case of Read Intensive Memory Access Pattern |
| 영문제목(English Title) |
NAND-Flash Memory Reliability and Power Consumption Issues Overcoming Technique in Case of Read Intensive Memory Access Pattern |
| 저자(Author) |
Victoria Shangina
Chang-Gun Lee
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| 원문수록처(Citation) |
VOL 43 NO. 02 PP. 1331 ~ 1333 (2016. 12) |
한글내용
(Korean Abstract) |
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영문내용
(English Abstract) |
Recently, the demand for NAND-flash based storage devices increased significantly because of fast grow of interest to the IOT and embedded systems. Along with undeniable advantages that usage of NAND-flash can give, there are still unsolved issues concerning reliability and power consumption. This paper introduces technique that will allow to reduce READ DISTURB ERRORS and improve reliability and power consumption in the case when the NAND memory is used in a read intensive manner.
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| 키워드(Keyword) |
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| 파일첨부 |
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