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Ȩ Ȩ > ¿¬±¸¹®Çå > Çмú´ëȸ ÇÁ·Î½Ãµù > Çѱ¹Á¤º¸°úÇÐȸ Çмú´ëȸ > 2016³â µ¿°èÇмú¹ßǥȸ

2016³â µ¿°èÇмú¹ßǥȸ

Current Result Document : 26 / 72 ÀÌÀü°Ç ÀÌÀü°Ç   ´ÙÀ½°Ç ´ÙÀ½°Ç

ÇѱÛÁ¦¸ñ(Korean Title) Real Time Reliability on NAND Flash Memory
¿µ¹®Á¦¸ñ(English Title) Real Time Reliability on NAND Flash Memory
ÀúÀÚ(Author) Gadimli Nushaba   Chang-Gun Lee  
¿ø¹®¼ö·Ïó(Citation) VOL 43 NO. 02 PP. 1275 ~ 1277 (2016. 12)
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(Korean Abstract)
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(English Abstract)
NAND flash memory has been widely used as a nonvolatile storage for storing data. However, it is challenging to execute program codes on NAND flash memory, since NAND flash memory only supports page-based reads, not byte-level random reads. Going through like this sort of challenges, it¡¯s also exhibits reliability issues. By itself flash memory exhibit higher performance. In this paper, we will work on improvement of reliability problems on an automated process to find the optimal paging strategy called RT-PLRU (Real-Time constrained combination of Pinning and LRU) that allows program codes stored in NAND flash memory to be executed satisfying real-time requirements with minimal usage of RAM. This process optimally configures the RT-PLRU in a developer-transparent way without giving any burden to the program developer. Under this kind real-time system circumstance, we will exhibit solution method package reliability issues of NAND flash which is working on Real-time Embedded System area. To the best of our knowledge, this is the first effort of our studies on reliability of NAND flash memory.
Å°¿öµå(Keyword)
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