영문내용
(English Abstract) |
NAND flash memory is widely used in embedded products as a nonvolatile storage because of its large capacity and high access speed for storing data. Memory reliability is a key issue of flash technology. The continuous trend to increase the storage density is driving technology close to its physical limits and new reliability challenges are meeting. However, reliability of NAND flash memory should be improve because of its bad blocks, cell behaviors, classical data loss and other sort of challenges which’s have a bade influence on NAND flash. In this paper, we will talk about the possible improving methods on reliability of NAND flash memory. In addition, we will touch the how we can implement NAND flash memory reliability issue solutions to real-time program code storage. To the best of our knowledge, this is the first effort of our studies on reliability of NAND flash memory.
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