ÇѱÛÁ¦¸ñ(Korean Title) |
´Üä³Î Çö»óÀ» ÁÙÀ̱â À§ÇÑ ¼öÁ÷Çü ³ª³ë¿ÍÀ̾î MOSFET ¼ÒÀÚ¼³°è |
¿µ¹®Á¦¸ñ(English Title) |
Device Design of Vertical Nanowire MOSFET to Reduce Short Channel Effect |
ÀúÀÚ(Author) |
±èÈñÁø
ÃÖÀºÁö
½Å°Çö
¹ÚÁ¾ÅÂ
Hui-jin Kim
Eun-ji Choi
Kang-hyun Shin
Jong-tae Park
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¿ø¹®¼ö·Ïó(Citation) |
VOL 19 NO. 02 PP. 0879 ~ 0882 (2015. 10) |
Çѱ۳»¿ë (Korean Abstract) |
º» ¿¬±¸¿¡¼´Â ½Ã¹Ä·¹À̼ÇÀ» ÅëÇØ Ã¤³Î Æø°ú ä³Î µµÇÎ ÇüÅ¿¡ µû¸¥ ¼öÁ÷Çü ³ª³ë¿ÍÀ̾î GAA
MOSFETÀÇ Æ¯¼ºÀ» ºñ±³, ºÐ¼®ÇÏ¿´´Ù. ù ¹ø°·Î, µå·¹ÀÎÀÇ ³¡ºÎºÐÀ» 20nm·Î °íÁ¤½ÃÅ°°í ¼Ò½ºÀÇ ³¡ºÎºÐÀÌ 30nm, 50nm, 80nm, 110nm·Î ½Ä°¢µÈ ¸ð¾çÀ¸·Î ¼³°èÇÑ ±¸Á¶ÀÇ Æ¯¼ºÀ» ºñ±³, ºÐ¼®ÇÏ¿´´Ù. µÎ ¹ø°·Î´Â µå·¹ÀÎ, ä³Î, ¼Ò½ºÀÇ ÆøÀÌ 50nm·Î ÀÏÁ¤ÇÑ Á÷»ç°¢Çü ¸ð¾çÀÇ ±¸Á¶¸¦ ¼³°èÇÏ¿´´Ù. ÀÌ ±¸Á¶¸¦ ±âÁØÀ¸·Î »ï¾Æ µå·¹ÀÎÀÇ ³¡ºÎºÐÀÌ 20nm°¡ µÇµµ·Ï ½Ä°¢µÈ »ç´Ù¸®²Ã ¸ð¾ç°ú ¹Ý´ë·Î ¼Ò½ºÀÇ ³¡ºÎºÐÀÌ 20nm°¡ µÇµµ·Ï ½Ä°¢µÈ ¿ª »ç´Ù¸®²Ã ¸ð¾çÀÇ ±¸Á¶¸¦ ¼³°èÇÏ¿© À§ ¼¼ ±¸Á¶ÀÇ Æ¯¼ºÀ» ºñ±³, ºÐ¼®ÇÏ¿´´Ù. ¸¶Áö¸·À¸·Î´Â Æø 50nmÀÇ Á÷»ç°¢Çü ±¸Á¶ÀÇ Ã¤³ÎÀ» ´Ù¼¸ ±¸°£À¸·Î ³ª´©¾î µµÇÎ ÇüŸ¦ ´Ù¾çÇÏ°Ô º¯È½ÃŲ °ÍÀÇ Æ¯¼ºÀ» ºñ±³, ºÐ¼®ÇÏ¿´´Ù. ù ¹ø° ½Ã¹Ä·¹À̼ǿ¡¼´Â ä³Î ÆøÀÌ °¡Àå ÀÛÀ» ¶§, µÎ ¹ø° ½Ã¹Ä·¹À̼ǿ¡¼´Â »ç´Ù¸®²Ã ¸ð¾çÀÇ ±¸Á¶ÀÏ ¶§, ¼¼ ¹ø° ½Ã¹Ä·¹À̼ǿ¡¼´Â ä³ÎÀÇ Áß¾Ó ºÎºÐÀÌ ³ô°Ô µµÇÎ µÇ¾úÀ» ¶§ °¡Àå ÁÁÀº Ư¼ºÀ» º¸¿´´Ù.
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¿µ¹®³»¿ë (English Abstract) |
In this work, we have analyzed the characteristics of vertical nanowire GAA MOSFET according to channel width and the type of channel doping through the simulation. First, we compared and analyzed the characteristics of designed structures which have tilted shapes that ends of drains are fixed as 20nm and ends of sources are 30nm, 50nm, 80nm and 110nm. Second, we designed the rectangular structure which has uniform width of drain, channel and source as 50nm. We used it as a standard and designed trapezoidal structure which is tilted so that the end of drain became 20nm and reverse trapezoidal structure which is tilted so that the end of source became 20nm. We compared and analyzed the characteristic of above three structures. For the last, we used the rectangular structure, divided its channel as five parts and changed the type of the five parts of doping concentration variously. In the first simulation, when the channel width is the shortest, in the second, when the structure is trapezoid, in the third, when the center of channel is high doped show the best characteristics.
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Å°¿öµå(Keyword) |
vertical nanowire
channel width
the type of channel doping
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ÆÄÀÏ÷ºÎ |
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