Çѱ¹Á¤º¸Åë½ÅÇÐȸ ³í¹®Áö (Journal of the Korea Institute of Information and Communication Engineering)
Current Result Document :
ÇѱÛÁ¦¸ñ(Korean Title) |
Æí±¤ ºñÀÇÁ¸¼º GaInAs/GaInAsP/InP ¹ÝµµÃ¼ ±¤ ÁõÆø±â ±¸Á¶¿¡ °üÇÑ ¿¬±¸ |
¿µ¹®Á¦¸ñ(English Title) |
A Study on the Structure of Polarization Independent GaInAs/GaInAsP/InP Semiconductor Optical Amplifier |
ÀúÀÚ(Author) |
¹ÚÀ±È£
°º´±Ç
À̼®
Á¶¿ë»ó
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Ȳ»ó±¸
ȫâÈñ
Yoon-Ho Park
Byung-Kwon Kang
Seok Lee
Yong-Sang Cho
Jeong-Ho Kim
Sang-Ku Hwang
Tchang-Hee Hong
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¿ø¹®¼ö·Ïó(Citation) |
VOL 03 NO. 03 PP. 0681 ~ 0686 (1999. 09) |
Çѱ۳»¿ë (Korean Abstract) |
º» ³í¹®¿¡¼´Â Æí±¤ ºñÀÇÁ¸ Ư¼ºÀ» °¡Áö´Â ¹ÝµµÃ¼ ±¤ ÁõÆø±â °³¹ßÀ» À§ÇØ Áö±Ý±îÁö¿Í´Â ´Ù¸¥ »õ·Î¿î ¹æ¹ýÀÎ 160($AA$ ¼ö½Ä À̹ÌÁö) µÎ²²¸¦ °¡Áö´Â GaInAs ¾çÀÚ ¿ì¹°¿¡ GaAs Delta ÃþÀ» °¢°¢ 1Ãþ, 2Ãþ, 3ÃþÀ» »ðÀÔÇÑ ±¸Á¶¿Í GaAs Delta 3ÃþÀÇ ±¸Á¶¿¡¼ Delta ÃþÀÇ µÎ²²¸¦ 1 ¿øÀÚÃþ¿¡¼ 3 ¿øÀÚÃþ±îÁö º¯È½ÃÄÑ °è»êÇÑ °á°ú, 1 ¿øÀÚÃþ µÎ²²¸¦ °¡Áö´Â GaAs Delta ÃþÀÌ 3Ãþ Æ÷ÇÔµÈ ±¸Á¶¿¡¼ 3dB ÀÌµæ ´ë¿ªÆøÀÌ TE, TM ¸ðµÎ 85nm·Î ¸Å¿ì ³ÐÀº ´ë¿ªÆø°ú Æí±¤ ºñÀÇÁ¸ Ư¼ºÀ» ÇÔ²² °¡Áö´Â ±¸Á¶¸¦ ¾ò¾î³¾ ¼ö ÀÖ¾ú´Ù. ÀÌ·¯ÇÑ GaInAs ¾çÀÚ ¿ì¹°¿¡ GaAs Delta ÃþÀ» »ðÀÔÇÑ ±¸Á¶ÀÇ ÀÌ·ÐÀû À̵æ Ư¼ºÀÇ °á°ú´Â ¹ÝµµÃ¼ ±¤ ÁõÆø±âÀÇ ¼³°è¿¡ ÀÖ¾î¼ ¾ÆÁÖ Áß¿äÇϸç, ¶ÇÇÑ ±¤´ë¿ª °úÀå ºÐÇÒ ´ÙÁßÈ ½Ã½ºÅÛ¿¡ Àû¿ëµÉ ¼ö ÀÖ´Â ¹ÝµµÃ¼ ±¤ ÁõÆø±â¿¡ ¾Ë¸ÂÀº ±¸Á¶·Î »ç¿ëµÉ ¼ö ÀÖ´Ù.
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¿µ¹®³»¿ë (English Abstract) |
In this study, the gain characteristics of the strained structures for SOA were calculated numerically and the optimized strained quantum well for the polarization-insensitive SOA was obtained. The structures used in this calculation were consisted of one, two, and three GaAs Delta layers respectively in the GaInAs(160 $AA$ ¼ö½Ä À̹ÌÁö) well. Moreover the third one was calculated by changing from one mono-layer to three mono-layers in the thichless of GaAs delta layers. This structure enhances the TM mode gain coefficient with good efficiency because the light-hole band is lifted up whereas the heavy-hole band is lowered down. Additionally, The structure of the 3 GaAs delta layers(1 mono layer thickness) shows 3dB gain bandwidth of 85nm in 1.55um wavelength system. This study is expected to be used in making a wide band and polarization-independent semiconductor optical amplifier practically.
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