ÇѱÛÁ¦¸ñ(Korean Title) |
NVM IP¿ë ÀúÀü¾Ð ±âÁØÀü¾Ð ȸ·Î ¼³°è |
¿µ¹®Á¦¸ñ(English Title) |
Design of Low-Voltage Reference Voltage Generator for NVM IPs |
ÀúÀÚ(Author) |
±è¸í¼®
Á¤¿ì¿µ
¹ÚÇå
ÇÏÆǺÀ
±è¿µÈñ
Meong-Seok Kim
Woo-Young Jeong
Heon Park
Pan-Bong Ha
Young-Hee Kim
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¿ø¹®¼ö·Ïó(Citation) |
VOL 17 NO. 02 PP. 0375 ~ 0378 (2013. 10) |
Çѱ۳»¿ë (Korean Abstract) |
º» ³í¹®¿¡¼´Â EEPROMÀ̳ª MTP µîÀÇ NVM ¸Þ¸ð¸® IP ¼³°è¿¡ ÇÊ¿ä·Î ÇÏ´Â PVT(Process-Voltage-Temperature) º¯µ¿¿¡ µÐ°¨ÇÑ ±âÁØÀü¾Ð(Reference Voltage) ȸ·Î¸¦ ¼³°èÇÏ¿´´Ù. ¸Å±×³ªÄ¨¹ÝµµÃ¼ 0.18¥ìm EEPROM °øÁ¤À» ÀÌ¿ëÇÏ¿© ¼³°èµÈ BGR(Bandgap Reference Voltage) ȸ·Î´Â wide swingÀ» °®´Â ij½ºÄÚµå Àü·ù°Å¿ï (cascode current-mirror) ÇüÅÂÀÇ ÀúÀü¾Ð ¹êµå°¸ ±âÁØÀü¾Ð¹ß»ý±â ȸ·Î¸¦ »ç¿ëÇÏ¿´À¸¸ç, PVT º¯µ¿¿¡ µÐ°¨ÇÑ ±âÁØÀü¾Ð Ư¼ºÀ» º¸ÀÌ°í ÀÖ´Ù. ÃÖ¼Ò µ¿ÀÛ Àü¾ÐÀº 1.43VÀÌ°í VDD º¯µ¿¿¡ ´ëÇÑ VREF ¹Î°¨µµ(sensitivity)´Â 0.064mV/VÀÌ´Ù. ±×¸®°í ¿Âµµ º¯µ¿¿¡ ´ëÇÑ VREF ¹Î°¨µµ´Â 20.5ppm/oCÀÌ´Ù. ÃøÁ¤µÈ VREF Àü¾ÐÀº Æò±Õ Àü¾ÐÀÌ 1.181VÀÌ°í 3¥ò´Â 71.7§ÆÀÌ´Ù.
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¿µ¹®³»¿ë (English Abstract) |
A reference voltage generator which is insensitive to PVT (process-voltage-temperature) variation necessary for NVM memory IPs such as EEPROM and MTP memories is designed in this paper. The designed BGR (bandgap reference voltage) circuit based on MagnaChip¡¯s 0.18¥ìm EEPROM process uses a low-voltage bandgap reference voltage generator of cascode current -mirror type with a wide swing and shows a reference voltage characteristic insensitive to PVT variation. The minimum operating voltage is 1.43V and the VREF sensitivity against VDD variation is 0.064mV/V. Also, the VREF sensitivity against temperature variation is 20.5ppm/oC. The VREF voltage has a mean of 1.181V and its three sigma (3¥ò) value is 71.7§Æ.
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Å°¿öµå(Keyword) |
NVM
reference voltage
PVT
cascode current-mirror
low-voltage
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ÆÄÀÏ÷ºÎ |
PDF ´Ù¿î·Îµå
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