Çѱ¹Á¤º¸Åë½ÅÇÐȸ ³í¹®Áö (Journal of the Korea Institute of Information and Communication Engineering)
Current Result Document :
ÇѱÛÁ¦¸ñ(Korean Title) |
SiO2 ¹öÆÛÃþÀ» °®´Â PET ±âÆÇÀ§¿¡ ÁõÂøÇÑ IZTO ¹Ú¸·ÀÇ Àü±âÀû ¹× ±¤ÇÐÀû Ư¼º |
¿µ¹®Á¦¸ñ(English Title) |
Electrical and Optical Properties of the IZTO Thin Film Deposited on PET Substrates with SiO2 Buffer Layer |
ÀúÀÚ(Author) |
¹ÚÁ¾Âù
Á¤¾çÈñ
°¼ºÁØ
Jong-Chan Park
Yang-Hee Joung
Seong-Jun Kang
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¿ø¹®¼ö·Ïó(Citation) |
VOL 21 NO. 03 PP. 0578 ~ 0584 (2017. 03) |
Çѱ۳»¿ë (Korean Abstract) |
PET (Polyethylene terephthalate) Çöó½ºÆ½ ±âÆÇ À§¿¡ IZTO (In-Zn-Sn-O) ¹Ú¸·À» ÁõÂøÇϱâ Àü¿¡, SiO2 ¹öÆÛÃþÀ» ÀüÀÚºö ÁõÂø ¹æ¹ýÀ¸·Î 100 nm ÀÇ µÎ²²·Î ÁõÂøÇÏ¿´´Ù. IZTO ¹Ú¸·Àº RF ¸¶±×³×Æ®·Ð ½ºÆÛÅ͸µ¹ýÀ¸·Î RF ÆÄ¿ö´Â 30~60W ·Î, °øÁ¤ ¾Ð·ÂÀº 1~7 mTorr ·Î º¯È½ÃÄÑ°¡¸ç SiO2/PET ¿¡ ÁõÂøÇÏ¿© IZTO ¹Ú¸·ÀÇ ±¸Á¶Àû, Àü±âÀû, ±¤ÇÐÀû Ư¼ºÀ» ºÐ¼®ÇÏ¿´´Ù. RF ÆÄ¿ö 50W ¿Í °øÁ¤ ¾Ð·Â 3 mTorr ¿¡¼ ÁõÂøÇÑ IZTO ¹Ú¸·ÀÌ 4.53 ¡¿ 10-3/¥Ø ÀÇ Á¦ÀÏ Å« Àç·áÆò°¡Áö¼ö¿Í À̶§ 4.42 ¡¿ 10-4 ¥Ø-cm ÀÇ ºñÀúÇ×°ú 27.63 ¥Ø/sq. ÀÇ ¸éÀúÇ×À¸·Î °¡Àå ¿ì¼öÇÑ Àü±âÀû Ư¼ºÀ» º¸¿´°í, °¡½Ã±¤ ¿µ¿ª (400 ¡800 nm) ¿¡¼ÀÇ Æò±Õ Åõ°úµµµµ 81.24 % ·Î °¡Àå Å« °ªÀ» ³ªÅ¸³»¾ú´Ù. AFM À¸·Î IZTO ¹Ú¸·ÀÇ Ç¥¸é Çü»óÀ» °üÂûÇÑ °á°ú, ¸ðµç IZTO ¹Ú¸·ÀÌ ÇÉȦÀ̳ª Å©·¢ °°Àº °áÇÔÀÌ ¾ø´Â Ç¥¸éÀ» °¡Áö¸ç, RF ÆÄ¿ö 50W ¿Í °øÁ¤ ¾Ð·Â 3 mTorr ¿¡¼ ÁõÂøÇÑ ¹Ú¸·ÀÌ 1.147 nm ÀÇ °¡Àå ÀÛÀº Ç¥¸é °ÅÄ¥±â¸¦ ³ªÅ¸³»¾ú´Ù. À̷κÎÅÍ SiO2/PET ±¸Á¶À§¿¡ ÁõÂøÇÑ IZTO ¹Ú¸·ÀÌ Â÷¼¼´ë Ç÷º½Ãºí µð½ºÇ÷¹ÀÌ ¼ÒÀÚ¿¡ ÀÀ¿ëµÉ ¼ö ÀÖ´Â ¸Å¿ì À¯¸ÁÇÑ Àç·áÀÓÀ» ¾Ë ¼ö ÀÖ¾ú´Ù.
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¿µ¹®³»¿ë (English Abstract) |
SiO2 buffer layer (100 nm) has been deposited on PET substrate by electron beam evaporation. And then, IZTO (In-Zn-Sn-O) thin film has been deposited on SiO2/PET substrate with different RF power of 30 to 60 W, working pressure, 1 to 7 mTorr, by RF magnetron sputtering. Structural, electrical and optical properties of IZTO thin film have been analyzed with various RF powers and working pressures. IZTO thin film deposited on the process condition of 50 W and 3 mTorr exhibited the best characteristics, where figure of merit was 4.53¡¿10-3 ¥Ø-1, resistivity, 4.42¡¿10-4 ¥Ø-cm, sheet resistance, 27.63 ¥Ø/sq., average transmittance (400-800 nm), 81.24%. As a result of AFM, all the IZTO thin film has no defects such as pinhole and crack, and RMS surface roughness was 1.147 nm. Due to these characteristics, IZTO thin film deposited on SiO2/PET structure was found to be a very compatible material that can be applied to the next generation flexible display device.
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Å°¿öµå(Keyword) |
IZTO ¹Ú¸·
°íÁÖÆÄ ¸¶±×³×Æ®·Ð ½ºÆÛÅ͸µ
PET 񃒀
¹öÆÛÃþ
Åõ¸í Àüµµ¸·
IZTO Thin Film
RF Magnetron Sputtering
PET Substrate
Buffer Layer
TCO
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ÆÄÀÏ÷ºÎ |
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