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Ȩ Ȩ > ¿¬±¸¹®Çå > Çмú´ëȸ ÇÁ·Î½Ãµù > Çѱ¹Á¤º¸Åë½ÅÇÐȸ Çмú´ëȸ > 2019³â Ãá°èÇмú´ëȸ

2019³â Ãá°èÇмú´ëȸ

Current Result Document :

ÇѱÛÁ¦¸ñ(Korean Title) Ge-MONOS ±¸Á¶¸¦ °¡Áø Ç÷¹½¬ ¸Þ¸ð¸® ¼ÒÀÚÀÇ ÇÁ·Î±×·¡¹Ö Àü¾Ð¿¡ µû¸¥ ¹®ÅÎ Àü¾Ð °üÂû
¿µ¹®Á¦¸ñ(English Title) Variation of Threshold Voltage by Programming Voltage Change of a Flash Memory Device with Ge-MONOS
ÀúÀÚ(Author) ¿ÀÁ¾Çõ   À¯À±¼·   Jong Hyuck Oh   Yun Seop Yu  
¿ø¹®¼ö·Ïó(Citation) VOL 23 NO. 01 PP. 0323 ~ 0324 (2019. 05)
Çѱ۳»¿ë
(Korean Abstract)
Ge-MONOS(Metal-Oxide-Nitride-Oxide-Silicon) ±¸Á¶¸¦ °¡Áø Ç÷¹½¬ ¸Þ¸ð¸® ¼ÒÀÚ¿¡ ´ëÇØ ÇÁ·Î±×·¡¹Ö Àü ¾Ð¿¡ µû¸¥ ¹®ÅÎ Àü¾ÐÀÇ º¯È­¸¦ Á¶»çÇß´Ù. ÇÁ·Î±×·¡¹Ö Àü¾ÐÀº 10V, 12V, 15V, 16V, 17VÀ» Àΰ¡ÇÏ¿´°í 1 ÃÊ µ¿¾È ÇÁ·Î±×·¡¹ÖÀ» ÁøÇàÇß´Ù. 10V¿¡¼­ 12V±îÁö´Â ¹®ÅÎÀü¾ÐÀº ¾à 0.5V·Î ÇÁ·Î±×·¥ Àü°ú Å©°Ô ´Ù¸£ Áö ¾Ê°í, 15V, 16V, 17V¿¡¼­ ¹®ÅÎÀü¾ÐÀÌ °¢°¢ 1.25V, 2.01V, 3.84V·Î ÇÁ·Î±×·¥ Àü°ú 0.75V, 1.49V, 3.44V Â÷ÀÌ°¡ ¹ß»ýÇß´Ù.
¿µ¹®³»¿ë
(English Abstract)
For flash memory devices with Ge-MONOS(metal-Oxide-Nitride-Oxide-Silicon) structures, variations of threshold voltage with programming voltage were investigated. The programming voltage was observed in steps of 1V from 10V to 17V and programmed for 1 second. The threshold voltage from 10V to 14V was about 0.5V, which is not much different from that before programing, and the threshold voltages at 15V, 16V and 17V were 1.25V, 2.01V and 3.84V, respectively, which differed 0.75V, 1.49V and 3.44V from that before programing.
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