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Ȩ Ȩ > ¿¬±¸¹®Çå > ±¹³» ³í¹®Áö > Çѱ¹Á¤º¸Åë½ÅÇÐȸ ³í¹®Áö (Journal of the Korea Institute of Information and Communication Engineering)

Çѱ¹Á¤º¸Åë½ÅÇÐȸ ³í¹®Áö (Journal of the Korea Institute of Information and Communication Engineering)

Current Result Document :

ÇѱÛÁ¦¸ñ(Korean Title) ºñ´ëĪ Â÷µ¿ ÀδöÅ͸¦ ÀÌ¿ëÇÑ 2.4-GHz ¼±Çü CMOS Àü·Â ÁõÆø±â
¿µ¹®Á¦¸ñ(English Title) Differential 2.4-GHz CMOS Power Amplifier Using an Asymmetric Differential Inductor to Improve Linearity
ÀúÀÚ(Author) À强Áø   ÀÌâÇö   ¹Úâ±Ù   Seongjin Jang   Changhyun Lee   Changkun Park  
¿ø¹®¼ö·Ïó(Citation) VOL 23 NO. 06 PP. 0726 ~ 0732 (2019. 06)
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(Korean Abstract)
º» ¿¬±¸¿¡¼­´Â Â÷µ¿ ±¸Á¶ÀÇ °íÁÖÆÄ ÁõÆø±â¸¦ À§ÇÑ ºñ´ëĪ Â÷µ¿ ÀδöÅ͸¦ Á¦¾ÈÇÏ¿´´Ù. Á¦¾È µÈ ºñ´ëĪ Â÷µ¿ ÀδöÅÍ´Â ÁõÆø±â ³» Â÷µ¿ ½ÅÈ£ °£ À§»ó ¿ÀÂ÷¸¦ ¿ÏÈ­Çϱâ À§ÇÑ °ÍÀ¸·Î¼­, Â÷µ¿ ÀδöÅÍ¿¡ Çü¼ºµÇ´Â Center-tapÀÇ À§Ä¡¸¦ Á¶Á¤ÇÏ¿©, Àü·Â ÁõÆø±â¸¦ ±¸¼ºÇÏ´Â ±¸µ¿ ÁõÆø±âÀÇ Â÷µ¿ ½ÅÈ£¿¡¼­ ¹Ù¶óº¸ÀÌ´Â ÀÓÇÇ´ø½º°¡ µ¿ÀÏÇÏ°Ô Çü¼º µÇµµ·Ï ÇÏ¿´´Ù. À̸¦ ÅëÇÏ¿© ±âÁ¸ Â÷µ¿ ÀδöÅ͸¦ »ç¿ëÇÏ´Â °æ¿ì ´ëºñ AM-to-AM ¹× AM-to-PM ¿Ö°îÀÌ ¿ÏÈ­µÊÀ» È®ÀÎ ÇÏ¿´´Ù. Á¦¾ÈÇÏ´Â ºñ´ëĪ Â÷µ¿ ÀδöÅÍÀÇ È¿¿ë¼ºÀ» È®ÀÎÇϱâ À§ÇÏ¿© 180-nm RFCMOS °øÁ¤À» ÀÌ¿ëÇÏ¿© 2.4-GHz CMOS Àü·Â ÁõÆø±â¸¦ ¼³°èÇÏ¿´À¸¸ç, EVM 5% ±âÁØ 20 dBÀÇ Àü·Â À̵æ°ú 17 dBmÀÇ ÃÖ´ë ¼±Çü Ãâ·Â Àü·ÂÀ» ¾ò¾ú´Ù.
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(English Abstract)
In this study, we proposed an asymmetric differential inductor to improve the linearity of differential power amplifiers. Considering the phase error between differential signals of the differential amplifier, the location of the center tap of the differential inductor was modified to minimize the error. As a result, the center tap was positioned asymmetrically inside the differential inductor. With the asymmetric differential inductor, the AM-to-AM and AM-to-PM distortions of the amplifier were suppressed. To confirm the feasibility of the inductor, we designed a 2.4 GHz differential CMOS PA for IEEE 802.11n WLAN applications with a 64-quadrature amplitude modulation (QAM), 9.6 dB peak-to-average power ratio (PAPR), and a bandwidth of 20 MHz. The designed power amplifier was fabricated using the 180-nm RF CMOS process. The measured maximum linear output power was 17 dBm, whereas EVM was 5%.
Å°¿öµå(Keyword) ac Á¢Áö   ÁõÆø±â   center-tap   Â÷µ¿   ÀδöÅÍ   ac ground   amplifier   center-tap   differential   inductor  
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