Çѱ¹Á¤º¸Åë½ÅÇÐȸ ³í¹®Áö (Journal of the Korea Institute of Information and Communication Engineering)
ÇѱÛÁ¦¸ñ(Korean Title) |
±âÆǿµµ°¡ Nb2O5/SiO2 ¹öÆÛÃþÀ§¿¡ ÁõÂøÇÑ ITO ¹Ú¸·ÀÇ ±¤ÇÐÀû ¹× Àü±âÀû Ư¼º¿¡ ¹ÌÄ¡´Â ¿µÇâ |
¿µ¹®Á¦¸ñ(English Title) |
Effect of Substrate Temperature on the Optical and Electrical Properties of ITO Thin Films deposited on Nb2O5/SiO2 Buffer Layer |
ÀúÀÚ(Author) |
Á¤¾çÈñ
°¼ºÁØ
Yang-Hee Joung
Seong-Jun Kang
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¿ø¹®¼ö·Ïó(Citation) |
VOL 20 NO. 05 PP. 0986 ~ 0991 (2016. 05) |
Çѱ۳»¿ë (Korean Abstract) |
º» ¿¬±¸¿¡¼´Â Nb2O5/SiO2 µÎ°³ÀÇ ¹öÆÛÃþÀ§¿¡ ±âÆǿµµ (»ó¿Â¡400¡É) ¿¡ µû¸¥ ITO ¹Ú¸·À» DC ¸¶±×³×Æ®·Ð ½ºÆÛÅ͸µ ¹ýÀ¸·Î ÁõÂøÇÏ¿© Àü±âÀû ¹× ±¤ÇÐÀû Ư¼ºÀ» Á¶»çÇÏ¿´´Ù. ±âÆǿµµ°¡ »ó½ÂÇÔ¿¡ µû¶ó ±×·¹ÀÎ Å©±â Áõ°¡¿¡ ±âÀÎÇÑ °áÁ¤¼º Çâ»ó ¶§¹®¿¡ ºñÀúÇ×ÀÌ ³·¾ÆÁö´Â °æÇâÀ» ³ªÅ¸³»¾ú´Ù. ±âÆǿµµ 400¡É ¿¡¼ ÁõÂøÇÑ ITO ¹Ú¸·ÀÌ 3.03¡¿10-4 ¥Ø¡¤cm ÀÇ ºñÀúÇ×°ú 86.6 ¥Ø/sq. ÀÇ ¸éÀúÇ×À¸·Î °¡Àå ¿ì¼öÇÑ °ªÀ» ³ªÅ¸³»¾ú´Ù. ±¤ÇÐÀû Ư¼ºÀ» ÃøÁ¤ÇÑ °á°ú, ±âÆǿµµ°¡ »ó½ÂÇÔ¿¡ µû¶ó °¡½Ã±¤ ¿µ¿ª (400¡800nm) ¿¡¼ÀÇ Æò±Õ Åõ°úµµ´Â Áõ°¡ÇÏ¿´À¸¸ç »öµµ (b*) °ªÀº °¨¼ÒÇÏ¿´´Ù. 400¡É ¿¡¼ ÁõÂøÇÑ ITO ¹Ú¸·ÀÇ Æò±Õ Åõ°úµµ¿Í »öµµ (b*) ´Â 85.8% ¿Í 2.13 À¸·Î ¹öÆÛÃþÀÌ »ðÀÔµÇÁö ¾ÊÀº ITO ¹Ú¸·ÀÇ 82.8% ¿Í 4.56 ¿¡ ºñÇØ »ó´çÈ÷ Çâ»óµÈ °á°ú¸¦ ³ªÅ¸³»¾ú´Ù. À̸¦ ÅëÇØ Nb2O5/SiO2 µÎ°³ÀÇ ¹öÆÛÃþÀ» µµÀÔÇÑ ITO ¹Ú¸·Àº À妽º ¸ÅĪ È¿°ú·Î ÀÎÇØ Åõ°úµµ ¹× »öµµ (b*) µîÀÇ ±¤ÇÐÀû Ư¼ºÀÌ ÇöÀúÈ÷ Çâ»óµÇ¾úÀ½À» È®ÀÎÇÒ ¼ö ÀÖ¾ú´Ù.
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¿µ¹®³»¿ë (English Abstract) |
In this study, we prepared ITO thin films on Nb2O5/SiO2 double buffer layer using DC magnetron sputtering method and investigated electrical and optical properties with various substrate temperatures (room temperature ~ 400¡É). The resistivity showed a decreasing tendency, because crystallinity has been improved due to the enlarged grain size with increasing substrate temperature. ITO thin film deposited at 400¡É showed the most excellent value of resistivity and sheet resistance as 3.03¡¿10-4¥Ø¡¤cm, 86.6¥Ø/sq., respectively. In results of optical properties, average transmittance was increased but chromaticity (b*) was decreased in visible light region (400~800nm) with increasing substrate temperature. Average transmittance and chromaticity (b*) of ITO thin film deposited at 400¡É exhibited significantly improved results as 85.8% and 2.13 compared to 82.8% and 4.56 of the ITO thin film without buffer layer. Finally, we found that ITO thin film introduced Nb2O5/SiO2 double buffer layer has a remarkably improved optical property such as transmittance and chromaticity due to the index matching effect.
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Å°¿öµå(Keyword) |
ITO ¹Ú¸·
Nb2O5/SiO2 ¹öÆÛÃþ
¸éÀúÇ×
Åõ°úµµ
»öµµ
À妽º ¸ÅĪ
ITO thin film
Nb2O5/SiO2 buffer layer
Sheet resistance
Transmittance
Chromaticity
Index matching
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