Çѱ¹Á¤º¸Åë½ÅÇÐȸ ³í¹®Áö (Journal of the Korea Institute of Information and Communication Engineering)
Current Result Document :
ÇѱÛÁ¦¸ñ(Korean Title) |
CMOS À̹ÌÁö ¼¾¼¿ë NMOS-Diode eFuse OTP ¼³°è |
¿µ¹®Á¦¸ñ(English Title) |
Design of an NMOS-Diode eFuse OTP Memory IP for CMOS Image Sensors |
ÀúÀÚ(Author) |
À̽ÂÈÆ
ÇÏÆǺÀ
±è¿µÈñ
Seung-Hoon Lee
Pan-Bong Ha
Young-Hee Kim
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¿ø¹®¼ö·Ïó(Citation) |
VOL 20 NO. 02 PP. 0306 ~ 0316 (2016. 02) |
Çѱ۳»¿ë (Korean Abstract) |
º» ³í¹®¿¡¼´Â ÇÁ·Î±×·¥ ¼±Åà ¼ÒÀڴ ä³Î ÆøÀÌ Å« NMOS (N-channel MOSFET) Æ®·£Áö½ºÅÍ ´ë½Å DNW (Deep N-Well) ¾È¿¡ Çü¼ºµÈ ä³Î ÆøÀÌ ÀÛÀº isolated NMOS Æ®·£Áö½ºÅÍÀÇ bodyÀÎ PW (P-Well)°ú source ³ëµåÀÎ n diffusion ¿µ¿ª »çÀÌ¿¡ Çü¼ºµÈ ±â»ýÇÏ´Â Á¢ÇÕ ´ÙÀÌ¿Àµå¸¦ »ç¿ëÇÏ´Â NMOS-Diode eFuse OTP (One-Time Programmable) ¼¿À» Á¦¾ÈÇÏ¿´´Ù. Á¦¾ÈµÈ eFuse OTP ¼¿Àº ÇÁ·Î±×·¥ ¸ðµå¿¡¼ NMOS Æ®·£Áö½ºÅÍ¿¡ Çü¼ºµÇ´Â ±â»ýÇÏ´Â Á¢ÇÕ ´ÙÀÌ¿Àµå¸¦ ÀÌ¿ëÇÏ¿© eFuse¸¦ blowing ½ÃŲ´Ù. ±×¸®°í Àб⠸ðµå¿¡¼´Â Á¢ÇÕ ´ÙÀÌ¿Àµå¸¦ ÀÌ¿ëÇÏ´Â °ÍÀÌ ¾Æ´Ï°í NMOS Æ®·£Áö½ºÅ͸¦ ÀÌ¿ëÇϱ⠶§¹®¿¡ ´ÙÀÌ¿ÀµåÀÇ contact voltage °Çϸ¦ Á¦°ÅÇÒ ¼ö ÀÖÀ¸¹Ç·Î '0' µ¥ÀÌÅÍ¿¡ ´ëÇÑ ¼¾½ÌºÒ·®À» Á¦°ÅÇÒ ¼ö ÀÖ´Ù. ¶ÇÇÑ Àб⠸ðµå¿¡¼ ä³Î ÆøÀÌ ÀÛÀº NMOS Æ®·£Áö½ºÅ͸¦ ÀÌ¿ëÇÏ¿© BL¿¡ Àü¾ÐÀ» Àü´ÞÇϹǷΠOTP ¼¿ÀÇ blowingµÇÁö ¾ÊÀº eFuse¸¦, ÅëÇØ È帣´Â Àбâ Àü·ù¸¦ 100§Ë À̳»·Î ¾ïÁ¦ÇÏ¿© blowingµÇÁö ¾ÊÀº eFuse°¡ blowingµÇ´Â ¹®Á¦¸¦ ÇØ°áÇÒ ¼ö ÀÖ´Ù.
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¿µ¹®³»¿ë (English Abstract) |
In this paper, an NMOS-diode eFuse OTP (One-Time Programmable) memory cell is proposed using a parasitic junction diode formed between a PW (P-Well), a body of an isolated NMOS (N-channel MOSFET) transistor with the small channel width, and an n diffusion, a source node, in a DNW (Deep N-Well) instead of an NMOS transistor with the big channel width as a program select device. Blowing of the proposed cell is done through the parasitic junction formed in the NMOS transistor in the program mode. Sensing failures of ¡®0¡¯ data are removed because of removed contact voltage drop of a diode since a NMOS transistor is used instead of the junction diode in the read mode. In addition, a problem of being blown for a non-blown eFuse from a read current through the corresponding eFuse OTP cell is solved by limiting the read current to less than 100§Ë since a voltage is transferred to BL by using an NMOS transistor with the small channel width in the read mode.
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Å°¿öµå(Keyword) |
NMOS-Diode
eFuse
OTP
CMOS À̹ÌÁö ¼¾¼
¼¾½Ì ºÒ·®
NMOS-Diode
eFuse
OTP
CMOS image sensor
sensing failure
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ÆÄÀÏ÷ºÎ |
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