Hemispherical Grain Silicon에 의한 정전용량 확보 및 공정조건 특성에 관한 연구

홈 > 연구문헌 > 국내 논문지 > 한국정보통신학회 논문지 (Journal of the Korea Institute of Information and Communication Engineering)

한글제목(Korean Title)	Hemispherical Grain Silicon에 의한 정전용량 확보 및 공정조건 특성에 관한 연구
영문제목(English Title)	A Study on Capacitance Enhancement by Hemispherical Grain Silicon and Process Condition Properties
저자(Author)	정양희 정재영 이승희 강성준 이보희 유일현 최남섭 Yang-Hee Joung Jae-Young Choung Seung-Hee Lee eong-Jun Kang Bo-Hee Lee Il-Hyun You Nam-Sup Choi
원문수록처(Citation)	VOL 04 NO. 04 PP. 0809 ~ 0815 (2000. 11)
한글내용 (Korean Abstract)
영문내용 (English Abstract)	The box capacitor structure with HSG-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a 0.482㎛² for 128Mbit DRAM. An HSG-Si formation technology with seeding method, which employs Si2H6 molecule irradiation and annealing, was applied for realizing 64Mbit and larger DRAMS. By using this technique, grain size controlled HSG-Si can be fabricated on in-situ phosphorous doped amorphous silicon electrodes. The HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors.
키워드(Keyword)
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