Çѱ¹Á¤º¸Åë½ÅÇÐȸ ³í¹®Áö (Journal of the Korea Institute of Information and Communication Engineering)
ÇѱÛÁ¦¸ñ(Korean Title) |
MB-OFDM ¹æ½ÄÀÇ UWB ½Ã½ºÅÛÀ» À§ÇÑ CMOS LNA ¼³°è |
¿µ¹®Á¦¸ñ(English Title) |
Design of a CMOS LNA for MB-OFDM UWB Systems |
ÀúÀÚ(Author) |
ÀÌÀç°æ
°±â¼·
¹ÚÁ¾ÅÂ
À¯Á¾±Ù
Jae-kyoung Lee
Ki-sub Kang
Jong-tae Park
Chong-gun Yu
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¿ø¹®¼ö·Ïó(Citation) |
VOL 10 NO. 01 PP. 0117 ~ 0122 (2006. 01) |
Çѱ۳»¿ë (Korean Abstract) |
º» ³í¹®¿¡¼´Â MB-OFDM ¹æ½ÄÀÇ Ãʱ¤´ë¿ª ½Ã½ºÅÛ ÀÀ¿ëÀ» À§ÇÑ ´ÜÀÏ ´Ü cascode ±¸Á¶ÀÇ CMOS ÀúÀâÀ½ÁõÆø±â¸¦ ¼³°èÇÏ¿´´Ù. ±¤´ë¿ª (3.1GHz¡4.9GHz) ÀÔ·Â ¸ÅĪÀº Ĩ ¸éÀû°ú ÀâÀ½Áö¼ö¸¦ ÁÙÀ̱â À§ÇØ °£´ÜÇÑ ´ë¿ª Åë°ú ÇÊÅ͸¦ »ç¿ëÇÏ¿© ¼öÇàÇÏ¿´´Ù. 0.18§ CMOS °øÁ¤º¯¼ö¸¦ »ç¿ëÇÏ¿© ¸ðÀǽÇÇè ÇÑ °á°ú, ¼³°èµÈ ÁõÆø±â´Â 9.7dBÀÇ ÃÖ´ë À̵æ, 2.1GHz¡7.1GHzÀÇ 3dB ´ë¿ªÆø, 2dBÀÇ ÃÖ¼ÒÀâÀ½Áö¼ö, -2dBmÀÇ IIP3, -11.8dB ÀÌÇÏÀÇ ÀÔ·Â ¹Ý»ç ¼Õ½Ç Ư¼ºÀ» º¸À̸ç, 1.8V °ø±Þ Àü¿øÀü¾Ð¿¡ 25.8mWÀÇ Àü·ÂÀ» ¼Ò¸ðÇÑ´Ù. Ĩ¸éÀûÀº Æе带 Æ÷ÇÔÇؼ 0.74§±ÀÌ´Ù.
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¿µ¹®³»¿ë (English Abstract) |
A CMOS LNA based on a single-stage cascode configuration is designed for MB-OFDM ultra-wide band(UWB) systems. Wideband(3.1GHz¡4.9GHz) input matching is performed using a simple bandpass filter to minimize the chip size and the noise figure degradation. The simulation results using 0.18§ CMOS process parameters show a power gain of 9.7dB, a 3dB band width of 2.1GHz¡7.1GHz, a minimum NF of 2dB, an IIP3 of -2dBm. better than -11.8dB of input matching while occupying only 0.74§± of chip area. It consumes 25.8mW from a 1.8V supply.
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Å°¿öµå(Keyword) |
CMOS LNA
UWB System
MB-OFDM
Low Noise
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ÆÄÀÏ÷ºÎ |
PDF ´Ù¿î·Îµå
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