Çѱ¹Á¤º¸Åë½ÅÇÐȸ ³í¹®Áö (Journal of the Korea Institute of Information and Communication Engineering)
ÇѱÛÁ¦¸ñ(Korean Title) |
ÀúÀü·Â OTP Memory IP ¼³°è ¹× ÃøÁ¤ |
¿µ¹®Á¦¸ñ(English Title) |
Design of low-power OTP memory IP and its measurement |
ÀúÀÚ(Author) |
±èÁ¤È£
ÀåÁöÇý
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ÇÏÆǺÀ
±è¿µÈñ
Jung-Ho Kim
Ji-Hye Jang
Liyan Jin
Pan-Bong Ha
Young-Hee Kim
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¿ø¹®¼ö·Ïó(Citation) |
VOL 14 NO. 11 PP. 2541 ~ 2547 (2010. 11) |
Çѱ۳»¿ë (Korean Abstract) |
º» ³í¹®¿¡¼´Â ´ë±â »óÅ¿¡¼ ÀúÀü·Â eFuse OTP ¸Þ¸ð¸® IP¸¦ ±¸ÇöÇϱâ À§ÇØ ¼Óµµ°¡ ¹®Á¦°¡ µÇÁö ¾Ê´Â ¹Ýº¹µÇ´Â ºí·Ï ȸ·Î¿¡¼ 1.2V ·ÎÁ÷ Æ®·£Áö½ºÅÍ ´ë½Å ´©¼³ (off-leakage) Àü·ù°¡ ÀÛÀº 3.3VÀÇ MV (Medium Voltage) Æ®·£Áö½ºÅÍ·Î ´ëüÇÏ´Â ¼³°è±â¼úÀ» Á¦¾ÈÇÏ¿´´Ù. ±×¸®°í Àб⠸ðµå¿¡¼ RWL (Read Word-Line)°ú BLÀÇ ±â»ýÇÏ´Â Ä¿ÆнÃÅϽº¸¦ ÁÙ¿© µ¿ÀÛÀü·ù ¼Ò¸ð¸¦ ÁÙÀÌ´Â µà¾ó Æ÷Æ® (Dual-Port) eFuse ¼¿À» »ç¿ëÇÏ¿´´Ù. ÇÁ·Î±×·¥ Àü¾Ð¿¡ ´ëÇÑ eFuse¿¡ Àΰ¡µÇ´Â ÇÁ·Î±×·¥ ÆÄ¿ö¸¦ ¸ðÀǽÇÇèÇϱâ À§ÇÑ µî°¡È¸·Î¸¦ Á¦¾ÈÇÏ¿´´Ù. ÇÏÀ̴нº 90³ª³ë CMOS À̹ÌÁö ¼¾¼ °øÁ¤À» ÀÌ¿ëÇÏ¿© ¼³°èµÈ 512ºñÆ® eFuse OTP ¸Þ¸ð¸® IPÀÇ ·¹À̾ƿô Å©±â´Â 342§¡¿ 236§À̸ç, 5VÀÇ ÇÁ·Î±×·¥ Àü¾Ð¿¡¼ 42°³ÀÇ »ùÇÃÀ» ÃøÁ¤ÇÑ °á°ú ÇÁ·Î±×·¥ ¼öÀ²Àº 97.6%·Î ¾çÈ£ÇÑ Æ¯¼ºÀ» ¾ò¾ú´Ù. ±×¸®°í ÃÖ¼Ò µ¿ÀÛÀü¿ø Àü¾ÐÀº 0.9V·Î ¾çÈ£ÇÏ°Ô ÃøÁ¤µÇ¾ú´Ù.
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¿µ¹®³»¿ë (English Abstract) |
In this paper, we propose a design technique which replaces logic transistors of 1.2V with medium-voltage transistors of 3.3V having small off-leakage current in repetitive block circuits where speed is not an issue, to implement a low-power eFuse OTP memory IP in the stand-by state. In addition, we use dual-port eFuse cells reducing operational current dissipation by reducing capacitances parasitic to RWL (Read word-line) and BL (Bit-line) in the read mode. Furthermore, we propose an equivalent circuit for simulating program power injected to an eFuse from a program voltage. The layout size of the designed 512-bit eFuse OTP memory IP with a 90nm CMOS image sensor process is 342§¡¿ 236§. It is confirmed by measurement experiments on 42 samples with a program voltage of 5V that we get a good result having 97.6 percent of program yield. Also, the minimal operational supply voltage is measured well to be 0.9V.
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Å°¿öµå(Keyword) |
ÀúÀü·Â
ÀÌÇ»Áî
¿ÀƼÇÇ ¸Þ¸ð¸®
À̹ÌÁö ¼¾¼
´©¼³ Àü·ù
low-power
eFuse
OTP memory
CMOS image sensor
off-leakage current
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ÆÄÀÏ÷ºÎ |
PDF ´Ù¿î·Îµå
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