Çѱ¹Á¤º¸Åë½ÅÇÐȸ ³í¹®Áö (Journal of the Korea Institute of Information and Communication Engineering)
ÇѱÛÁ¦¸ñ(Korean Title) |
PBTI¿¡ ÀÇÇÑ ¹«Á¢ÇÕ ¹× ¹ÝÀü¸ðµå ´ÙÁß°ÔÀÌÆ® MOSFETÀÇ ¼ÒÀÚ Æ¯¼º ÀúÇÏ ºñ±³ ºÐ¼® |
¿µ¹®Á¦¸ñ(English Title) |
Comparative Analysis of PBTI Induced Device Degradation in Junctionless and Inversion Mode Multiple-Gate MOSFET |
ÀúÀÚ(Author) |
±èÁø¼ö
È«Áø¿ì
±èÇý¹Ì
ÀÌÀç±â
¹ÚÁ¾ÅÂ
Jin-Su Kim
Jin-Woo Hong
Hye-Mi Kim
Jae-Ki Lee
Jong-Tae Park
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¿ø¹®¼ö·Ïó(Citation) |
VOL 17 NO. 01 PP. 0151 ~ 0157 (2013. 01) |
Çѱ۳»¿ë (Korean Abstract) |
º» ¿¬±¸¿¡¼´Â ´ÙÁß°ÔÀÌÆ® ±¸Á¶ÀÎ ³ª³ë ¿ÍÀ̾î n-ä³Î ¹«Á¢ÇÕ(junctionless)¿Í ¹ÝÀü¸ðµå(inversion mode) ´ÙÁß°ÔÀÌÆ® MOSFET(Multiple-Gate MOSFET : MuGFET)ÀÇ PBTI¿¡ ÀÇÇÑ ¼ÒÀÚ Æ¯¼º ÀúÇϸ¦ ºñ±³ ºÐ¼®ÇÏ¿´´Ù. PBTI¿¡ ÀÇÇؼ ¹«Á¢ÇÕ ¹× ¹ÝÀü¸ðµå ¼ÒÀÚÀÇ ¹®ÅÎÀü¾ÐÀÌ Áõ°¡ÇÏ´Â °ÍÀ¸·Î °üÃøµÇ¾úÀ¸¸ç ¹«Á¢ÇÕ ¼ÒÀÚÀÇ ¹®ÅÎÀü¾Ð º¯È°¡ ¹ÝÀü¸ðµå ¼ÒÀÚº¸´Ù ÀÛÀ½À» ¾Ë ¼ö ÀÖ¾ú´Ù. ±×·¯³ª ¼ÒÀÚƯ¼º ÀúÇÏ ºñÀ²Àº ¹ÝÀü¸ðµå ¼ÒÀÚ°¡ ¹«Á¢ÇÕ ¼ÒÀÚº¸´Ù Å« °ÍÀ¸·Î °üÃøµÇ¾ú´Ù. Ư¼ºÀúÇÏ È°¼ºÈ ¿¡³ÊÁö´Â ¹ÝÀü¸ðµå ¼ÒÀÚ°¡ ¹«Á¢ÇÕ ¼ÒÀÚº¸´Ù Å« °ÍÀ» ¾Ë ¼ö ÀÖ¾ú´Ù. PBTI¿¡ ÀÇÇÑ ¼ÒÀÚ Æ¯¼º ÀúÇÏ°¡ ¹«Á¢ÇÕ ¼ÒÀÚº¸´Ù ¹ÝÀü¸ðµå ¼ÒÀÚ°¡ ´õ ½ÉÇÑ °ÍÀ» ºÐ¼®Çϱâ À§ÇÏ¿© 3Â÷¿ø ¼ÒÀÚ ½Ã¹Ä·¹À̼ÇÀ» ¼öÇàÇÏ¿´´Ù. °°Àº °ÔÀÌÆ® Àü¾Ð¿¡¼ ÀüÀÚÀÇ ³óµµ´Â °°À¸³ª ¼öÁ÷¹æÇâÀÇ Àü°è´Â ¹ÝÀü¸ðµå ¼ÒÀÚ°¡ ¹«Á¢ÇÕ ¼ÒÀÚº¸´Ù Å« °ÍÀ» ¾Ë ¼ö ÀÖ¾ú´Ù.
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¿µ¹®³»¿ë (English Abstract) |
In this paper, a comparative analysis of PBTI induced device degradation in nanowire n-channel junctionless and inversion mode Multiple-Gate MOSFET(MuGFETs) has been performed. It has been observed that the threshold voltage is increased after PBTI stress and the threshold voltage variation of junctionless device is less significant than that of inversion mode device. However the degradation rate of junctionless device is less significant than that of inversion mode device. The activation energy of the device degradation is larger in inversion mode device than junctionless device. In order to analyze the more significant PBTI induced device degradation in inversion mode device than junctionless device, 3-dimensional device simulation has been performed. The electron concentration in inversion mode device is equal to the one in junctionless device but the electric field in inversion mode device is larger than junctionless device.
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Å°¿öµå(Keyword) |
¹«Á¢ÇÕ ´ÙÁß°ÔÀÌÆ® MOSFET
¹ÝÀü¸ðµå ´ÙÁß°ÔÀÌÆ® MOSFET
PBTI
¼ÒÀÚ Æ¯¼º ÀúÇÏ
Junctionless MuGFET
Inversion mode MuGFET
PBTI
Device degradation
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ÆÄÀÏ÷ºÎ |
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