Çѱ¹Á¤º¸Åë½ÅÇÐȸ ³í¹®Áö (Journal of the Korea Institute of Information and Communication Engineering)
ÇѱÛÁ¦¸ñ(Korean Title) |
HfO2 ¿Ã³¸® ¿Âµµ ¹× µÎ²²¿¡ µû¸¥ RRAMÀÇ Àü±âÀû Ư¼º |
¿µ¹®Á¦¸ñ(English Title) |
Electrical Characteristics of RRAM with HfO2 Annealing Temperatures and Thickness |
ÀúÀÚ(Author) |
ÃÖÁøÇü
À¯Á¾±Ù
¹ÚÁ¾ÅÂ
Jin-Hyung Choi
Chong Gun Yu
Jong-Tae Park
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¿ø¹®¼ö·Ïó(Citation) |
VOL 18 NO. 03 PP. 0663 ~ 0669 (2014. 03) |
Çѱ۳»¿ë (Korean Abstract) |
º» ¿¬±¸¿¡¼´Â RRAM (Resistive Random Access Memory) ¼ÒÀÚÀÇ HfO2 ¿Ã³¸® ¿Âµµ¿Í µÎ²²¿¡ µû¶ó ¼ÒÀÚÀÇ Àü±âÀû Ư¼ºÀ» ÃøÁ¤ÇÏ¿´´Ù. Á¦ÀÛÇÑ ¼ÒÀÚ´Â »óºÎÀü±ØÀÌ Pt/Ti(150nm), ÇϺÎÀü±ØÀº Pt(150nm), »êÈÃþ HfO2ÀÇ µÎ²²´Â 45nm¿Í 70nmÀÌ°í, ¿Ã³¸®¸¦ ÇÏÁö ¾ÊÀº ¼ÒÀÚ¿Í 500¡É, 850¡É·Î ¿Ã³¸®¸¦ ÇÑ 3 Á¾·ùÀÌ´Ù. ¿Âµµ¿¡ µû¶ó ¼ÒÀÚÀÇ Àü±âÀû ¼º´ÉÀ¸·Î ¼Â/¸®¼Â Àü¾Ð, ÀúÇ׺¯È¸¦ ÃøÁ¤ÇÏ¿´´Ù. ¿Âµµ¿¡ µû¸¥ ±âº»Æ¯¼º ºÐ¼® ½ÇÇè °á°ú ¿Âµµ°¡ Áõ°¡ÇÔ¿¡ µû¶ó ¼Â Àü¾Ð Àº °¨¼ÒÇÏ°í ¸®¼Â Àü¾ÐÀº Áõ°¡ÇÏ¿© °¨Áö ¿©À¯ ÆøÀÌ °¨¼ÒÇÏ¿´´Ù. ¿Ã³¸® ¿Âµµ°¡ 850¡É¼ÒÀÚ°¡ °í¿Â Ư¼ºÀÌ °¡Àå ¿ì¼öÇÑ °ÍÀ» º¸¿´´Ù. HfO2 »êÈÃþÀÇ µÎ²² 45nm ¼ÒÀÚ°¡ 70nm ¼ÒÀÚº¸´Ù °¨Áö ¿©À¯ ÆøÀÌ Å©Áö¸¸ °áÇÔÀ¸·Î LRS(Low Resistive State)¿¡¼ ÀúÇ×ÀÌ Å« °ÍÀ¸·Î ÃøÁ¤µÇ¾ú´Ù. HfO2 »êÈÃþ ÁõÂø ½Ã °áÇÔÀ» ÁÙÀÏ ¼ö ÀÖ´Â °øÁ¤Á¶°ÇÀ» ¼³Á¤Çϸé Ãʹڸ·ÀÇ RRAM ¼ÒÀÚ¸¦ Á¦ÀÛÇÒ ¼ö ÀÖÀ» °ÍÀ¸·Î ±â´ëµÈ´Ù.
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¿µ¹®³»¿ë (English Abstract) |
The electrical characteristics of RRAM with different annealing temperature and thickness have been measured and discussed. The devices with Pt/Ti top electrode of 150nm, Pt bottom electrode of 150nm, HfO2 oxide thickness of 45nm and 70nm have been fabricated. The fabricated device were classified by 3 different kinds according to the annealing temperature, such as non-annealed, annealed at 500¡Éand annealed at 850¡É. The set and reset voltages and the variation of resistance with temperatures have been measured as electrical properties. From the measurement, it was found that the set voltages were decreased and the reset voltage were increased slightly, and thus the sensing window was decreased with increasing of measurement temperatures. It was remarkable that the device annealed at 850¡Éshowed the best performances. Although the device with thickness of 45nm showed better performances in the point of the sensing window, the resistance of 45nm devices was large relatively in the low resistive state. It can be expected to enhance the device performances with ultra thin RRAM if the defect generation could be reduced at the HfO2 deposition process.
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Å°¿öµå(Keyword) |
ÀúÇ×¼º ¸Þ¸ð¸®
¿Ã³¸® ¿Âµµ
HfO2 »êÈÃþ µÎ²²
Resistive Random Access Memory
annealing temperature
HfO2 oxide thickness
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ÆÄÀÏ÷ºÎ |
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