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Ȩ Ȩ > ¿¬±¸¹®Çå > ±¹³» ³í¹®Áö > Çѱ¹Á¤º¸°úÇÐȸ ³í¹®Áö > Á¤º¸°úÇÐȸ ³í¹®Áö A : ½Ã½ºÅÛ ¹× ÀÌ·Ð

Á¤º¸°úÇÐȸ ³í¹®Áö A : ½Ã½ºÅÛ ¹× ÀÌ·Ð

Current Result Document : 11 / 11

ÇѱÛÁ¦¸ñ(Korean Title) NAND Ç÷¡½Ã¸Þ¸ð¸®¸¦ À§ÇÑ °¡»ó¸Þ¸ð¸®ÀÇ ¾²±â ÂüÁ¶ ºÐ¼® ¹× ÆäÀÌÁö ±³Ã¼ ¾Ë°í¸®Áò ¼³°è
¿µ¹®Á¦¸ñ(English Title) Analyzing Virtual Memory Write Characteristics and Designing Page Replacement Algorithms for NAND Flash Memory
ÀúÀÚ(Author) ÀÌÇýÁ¤   ¹ÝÈ¿°æ   Hyejeong Lee   Hyokyung Bahn  
¿ø¹®¼ö·Ïó(Citation) VOL 36 NO. 06 PP. 0543 ~ 0556 (2009. 12)
Çѱ۳»¿ë
(Korean Abstract)
ÃÖ±Ù NAND Ç÷¡½Ã¸Þ¸ð¸®¸¦ ¸ð¹ÙÀϽýºÅÛÀÇ ÆÄÀÏÀúÀå¿ë »Ó ¾Æ´Ï¶ó °¡»ó¸Þ¸ð¸®ÀÇ ½º¿ÒÀåÄ¡¿ëÀ¸·Î »ç¿ëÇÏ·Á´Â ½Ãµµ°¡ ´Ã°í ÀÖ´Ù. °¡»ó¸Þ¸ð¸®ÀÇ ÆäÀÌÁö ÂüÁ¶´Â ½Ã°£Áö¿ª¼ºÀÌ Áö¹èÀûÀ̾ LRU ¹× À̸¦ ±Ù»ç½ÃŲ CLOCK¡¡¾Ë°í¸®ÁòÀÌ ³Î¸® »ç¿ëµÈ´Ù. ÇÑÆí, NAND Ç÷¡½Ã¸Þ¸ð¸®´Â Àб⠿¬»ê¿¡ ºñÇØ ¾²±â ¿¬»êÀÇ ºñ¿ëÀÌ ³ô¾Æ À̸¦ °í·ÁÇÑ ÆäÀÌÁö ±³Ã¼ ¾Ë°í¸®ÁòÀÌ ÇÊ¿äÇÏ´Ù. º» ³í¹®¿¡¼­´Â °¡»ó¸Þ¸ð¸®ÀÇ Àбâ/¾²±â ÂüÁ¶ ÆÐÅÏÀ» µ¶¸³ÀûÀ¸·Î ºÐ¼®ÇÏ¿© ½Ã°£Áö¿ª¼ºÀÌ °­ÇÑ Àбâ ÂüÁ¶¿Í ´Þ¸® ¾²±â ÂüÁ¶ÀÇ °æ¿ì ½Ã°£Áö¿ª¼ºÀÇ ¼øÀ§ ¿ªÀü Çö»óÀÌ ¹ß»ýÇÔÀ» ¹ß°ßÇÏ¿´´Ù. ÀÌ¿¡ ±Ù°ÅÇÏ¿© º» ³í¹®Àº ¾²±âÀÇ ÀçÂüÁ¶ ¼ºÇâ ¿¹ÃøÀ» À§ÇØ ½Ã°£Áö¿ª¼º»Ó ¾Æ´Ï¶ó ¾²±â ¿¬»êÀÇ ºóµµ¸¦ ÇÔ²² °í·ÁÇÏ´Â ÆäÀÌÁö ±³Ã¼ ¾Ë°í¸®ÁòÀ» Á¦¾ÈÇÑ´Ù. »õ·Î¿î ¾Ë°í¸®ÁòÀº ¿¬»êº° I/O ºñ¿ëÀ» °í·ÁÇؼ­ ¸Þ¸ð¸® °ø°£À» Àб⠿¬»ê°ú ¾²±â ¿¬»ê¿¡ µ¶¸³ÀûÀ¸·Î ÇÒ´çÇÏ°í ÂüÁ¶ ÆÐÅÏÀÇ º¯È­¿¡ ÀûÀÀÇØ ÇÒ´ç °ø°£À» µ¿ÀûÀ¸·Î º¯È­½ÃŲ´Ù. ¾Ë°í¸®ÁòÀÇ ½Ã°£ ¿À¹öÇìµå°¡ ¸Å¿ì Àû¾î °¡»ó¸Þ¸ð¸® ½Ã½ºÅÛ¿¡¼­ »ç¿ëµÉ ÃÖÀûÀÇ Á¶°ÇÀ» °®Ãß°í ÀÖÀ¸¸ç ÆĶó¹ÌÅÍ ¼³Á¤ÀÌ ÇÊ¿ä ¾øÀ½¿¡µµ CLOCK, CAR, CFLRU ¾Ë°í¸®Áò¿¡ ºñÇØ 20-66% Á¤µµÀÇ I/O ¼º´ÉÀ» Çâ»ó½ÃÅ´À» º¸¿´´Ù.
¿µ¹®³»¿ë
(English Abstract)
Recently, NAND flash memory is being used as the swap device of virtual memory as well as the file storage of mobile systems. Since temporal locality is dominant in page references of virtual memory, LRU and its approximated CLOCK algorithms are widely used. However, cost of a write operation in flash memory is much larger than that of a read operation, and thus a page replacement algorithm should consider this factor. This paper analyzes virtual memory read/write reference patterns individually, and observes the ranking inversion problem of temporal locality in write references which is not observed in read references. With this observation, we present a new page replacement algorithm considering write frequency as well as temporal locality in estimating write reference behaviors. This new algorithm dynamically allocates memory space to read/write operations based on their reference patterns and I/O costs. Though the algorithm has no external parameter to tune, it supports optimized implementations for virtual memory systems, and also performs 20-66% better than CLOCK, CAR, and CFLRU algorithms.
Å°¿öµå(Keyword) NAND Ç÷¡½Ã¸Þ¸ð¸®   ÆäÀÌÁö ±³Ã¼ ¾Ë°í¸®Áò   °¡»ó¸Þ¸ð¸®   NAND Flash Memory   Page Replacement Algorithm   Virtual Memory  
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