| 한글제목(Korean Title) |
The Wet Etching Mechanism of the CoNbZr/Cu/CoNbZr Multi-layer Films for Micro Magnetic Devices |
| 영문제목(English Title) |
The Wet Etching Mechanism of the CoNbZr/Cu/CoNbZr Multi-layer Films for Micro Magnetic Devices |
| 저자(Author) |
Bok-Ki Min
Hyun-Sik Kim
Jae-Sung Song
|
| 원문수록처(Citation) |
VOL 05 NO. 02 PP. 0098 ~ 0101 (2000. 04) |
한글내용
(Korean Abstract) |
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영문내용
(English Abstract) |
We fabricated a new etchant to form the patterns by the wet chemical etching, and determined the best etching conditions and the chemical etchant compositions. The Cu was etched selectively independent of the concentration of the aqueous solution of 17.5 mol% FeCl3 6H2O, but the magnetic CoNbZr thin film was not. The chemical etching was achieved by the aqueous solution of 17.5 mol% FeCl3 6H2O mixed with 20 mol% HF for 150 sec, which etched the CoNbZr/ Cu/CoNbZr multi-layer films for micro magnetic devices at the same time. Also, the chemical etchant etched the CoNbZr/Cu/ CoNbZr multi-layer films through three steps. It was shown that the cross-section had the isotropic structure and excellent etching characteristics with the above chemical etchant.
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| 키워드(Keyword) |
Wet Etching
CoNbZr/Cu/CoNbZr Multi-layer Film
Anisotropic Etching
Micro Magnetic Device
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| 파일첨부 |
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