영문내용
(English Abstract) |
This paper presents a method for measuring the energy gap of semiconductor material. The method consists of four main steps : the setting of an energy gap gray level as a reference sample; determining a functional relation between pixel coordinates and wavelengths; scanning the respective pixel coordinates along the x-axis of an image, and converting the coordinates to wavelengths in order to determine the energy gap. The method measures the energy gap optically using the following apparatuses; a light beam, a lens for focusing the light beam, a polychromater for irradiating a spectrum of the light beam to the sample, optical filters, an image acquisition apparatus, an image signal processor, an energy gap detecting and displaying apparatus, a computer for executing the operation and control functions needed to measure the energy gap, and energy gap detecting and displaying software. Initial experimentation conducted on a 4.5 mm thick slab of LEC grown semi-insulating GaAs has revealed tentative confirmation of the proposed theoretical model.
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