Çѱ¹Á¤º¸Åë½ÅÇÐȸ ³í¹®Áö (Journal of the Korea Institute of Information and Communication Engineering)
Current Result Document :
ÇѱÛÁ¦¸ñ(Korean Title) |
À§¼º Åë½Å ½Ã½ºÅÛ ÀÀ¿ëÀ» À§ÇÑ ¿ì¼öÇÑ ¼º´ÉÀÇ Ku ´ë¿ª 2W MMIC Àü·ÂÁõÆø±â |
¿µ¹®Á¦¸ñ(English Title) |
High Performance Ku-band 2W MMIC Power Amplifier for Satellite Communications |
ÀúÀÚ(Author) |
·ù±Ù°ü
¾È±â¹ü
±è¼ºÂù
Keun-Kwan Ryu
Ki-Burm Ahn
Sung-Chan Kim
|
¿ø¹®¼ö·Ïó(Citation) |
VOL 18 NO. 11 PP. 2697 ~ 2702 (2014. 11) |
Çѱ۳»¿ë (Korean Abstract) |
º» ³í¹®¿¡¼´Â À§¼º Åë½Å ½Ã½ºÅÛ ÀÀ¿ëÀ» À§ÇÏ¿© Ku ´ë¿ª¿¡¼ µ¿ÀÛ °¡´ÉÇÑ 2W MMIC (monolithic microwave integrated circuit) Àü·ÂÁõÆø±â¸¦ °³¹ßÇÏ¿´´Ù. 2W MMIC Àü·ÂÁõÆø±â´Â WIN (wireless information networking) semiconductor Corp.ÀÇ GaAs ±â¹Ý PHEMT (pseudomorphic high electron mobility transistor) °øÁ¤À» »ç¿ëÇÏ¿© °³¹ß µÇ¾ú´Ù. °³¹ßµÈ Ku ´ë¿ª 2W MMIC Àü·ÂÁõÆø±âÀÇ ÃøÁ¤°á°ú, 13.75 GHz ~ 14.5 GHzÀÇ µ¿ÀÛÁÖÆļö ¹üÀ§¿¡¼ 29 dB ÀÌ»óÀÇ À̵æ, 33.4 dBm ÀÌ»óÀÇ Æ÷È Ãâ·ÂÀü·ÂÀ» ¾ò¾ú´Ù. ƯÈ÷ Àü·ÂºÎ°¡È¿À²Àº 29 %·Î ±âÁ¸¿¡ ¹ßÇ¥µÈ GaAs ±â¹Ý Ku ´ë¿ª 2W MMIC Àü·ÂÁõÆø±â »ó¿ë Á¦Ç°µé¿¡ ºñÇÏ¿© ³ôÀº °á°ú¸¦ ¾òÀ» ¼ö ÀÖ¾ú´Ù. |
¿µ¹®³»¿ë (English Abstract) |
In this paper, we demonstrated a Ku-band 2W MMIC power amplifier for satellite communication applications. The device technology used relies on 0.25 § GaAs pseudomorphic high electron mobility transistor (PHEMT) of Wireless Information Networking (WIN) Semiconductor foundry. The 2W MMIC power amplifier has gain of over 29 dB and saturation output power of over 33.4 dBm in the frequency range of 13.75 ~ 14.5 GHz. Power added efficiency (PAE) is a 29 %. To our knowledge, this is the highest power added efficiency reported for any commercial GaAs-based 2W MMIC power amplifier in the Ku-band. |
Å°¿öµå(Keyword) |
Àü·ÂÁõÆø±â
Ku ´ë¿ª
2W
PHEMT
MMIC
power amplifier
Ku-band
2W
PHEMT
MMIC
|
ÆÄÀÏ÷ºÎ |
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