| 한글제목(Korean Title) |
Device Characteristics and Hot Carrier Lifetime Characteristics Shift Analysis by Carbon Implant used for Vth Adjustment |
| 영문제목(English Title) |
Device Characteristics and Hot Carrier Lifetime Characteristics Shift Analysis by Carbon Implant used for Vth Adjustment |
| 저자(Author) |
Seong-Yeol Mun
Seong-Jun Kang
Yang-Hee Joung
|
| 원문수록처(Citation) |
VOL 11 NO. 04 PP. 0288 ~ 0292 (2013. 12) |
한글내용
(Korean Abstract) |
|
영문내용
(English Abstract) |
In this paper, a carbon implant is investigated in detail from the perspectives of performance advantages and side effects for the thick n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET). Threshold voltage (Vth) adjustment using a carbon implant significantly improves the Vth mismatch performance in a thick (3.3-V) n-MOS transistor. It has been reported that a bad mismatch occurs particularly in the case of 0.11-μm Vth node technology. This paper investigates a carbon implant process as a promising candidate for the optimal Vth roll-off curve. The carbon implant makes the Vth roll-off curve perfectly flat, which is explained in detail. Further, the mechanism of hot carrier injection lifetime degradation by the carbon implant is investigated, and new process integration involving the addition of a nitrogen implant in the lightly doped drain process is offered as its solution. This paper presents the critical side effects, such as Isub increases and device performance shifts caused by the carbon implant and suggests an efficient method to avoid these issues. |
| 키워드(Keyword) |
Carbon implant
Hot carrier injection
MOS transistor
Threshold voltage
|
| 파일첨부 |
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