Journal of EEIS
Current Result Document :
| 한글제목(Korean Title) |
Fabrication of Novel Metal Field Emitter Arrays (FEAs) Using Isotropic Silicon Etching and Oxidation |
| 영문제목(English Title) |
Fabrication of Novel Metal Field Emitter Arrays (FEAs) Using Isotropic Silicon Etching and Oxidation |
| 저자(Author) |
Chang-Woo Oh
Chun-Gyoo Lee
Byung-Gook Park
Jong-Duk Lee
Jong-Ho Lee
|
| 원문수록처(Citation) |
VOL 02 NO. 06 PP. 0212 ~ 0216 (1997. 12) |
한글내용
(Korean Abstract) |
|
영문내용
(English Abstract) |
A new metal tip fabrication process for low voltage operation is reported in this paper. The key element of the fabrication process is that isotropic silicon etchingand oxidation process used in silicon tip fabrication is utilized for gate hole size reduction and gate oxide layer. A metal FEA with 625 tips was fabricated in order to demonstrate the validity of the new process and submicron gate apertures were successfully obtained from originally 1.7 %u339B diameter mask. The emission current above noise level was observed at the gate bias of 50V. The required gate voltage to obtain the anode current of 0.1 %u03BCA/Tip was 74V and the emission current was stable above 2 %u03BCA/tip without any distruption. The local field conversion factor and the emitting area were calculated as 7.891 x 10(5%uC2B9)%u339D(-1%uC2B9) and 3.2 x 10(-14%uC2B9)cm�/tip,respectively. |
| 키워드(Keyword) |
Semiconductors
Fabrication
Field Emitter Arrays
FEAs
Isotropic Silicon
|
| 파일첨부 |
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