Journal of EEIS
Current Result Document :
| 한글제목(Korean Title) |
The a-Si:H/poly-Si Heterojunction Solar Cells |
| 영문제목(English Title) |
The a-Si:H/poly-Si Heterojunction Solar Cells |
| 저자(Author) |
Sang-Su kim
Do-Young kim
Dong-Gun Lim
Junsin Yi
Jae-Choon Lee
Koeng-Su- Lim
|
| 원문수록처(Citation) |
VOL 02 NO. 05 PP. 0065 ~ 0071 (1997. 10) |
한글내용
(Korean Abstract) |
|
영문내용
(English Abstract) |
We present heterojuction solar cells with a structure of metal/a-Si:H (n-i-p)/poly-Si (n-p)/metal for the terrestrial applications. This cell consists of two component cells: a top n-i-p junction a-Si;H cell wide-bandgap 1.8eV and a bottom n-p junction poly-Si cell with narrow-bandgap 1.1eV. The efficiency inflencing factors of the solar cell were investigated in terms of simulation and experiment. Three main topics of the investigated study were the bottom cell with n-p junction poly-Si, the top a-Si:H cell with n-i-p junction, and the interface layer effrcts of heterojunction cell. The efficiency of bottom cell was improvement with a pretreatment temperature of 900%u2103, surface polishing, emitter thickness of 0.43%u339B, top Yb metal, and grid finger shading of 7% coverage. The process optimized cell showed a conversion efficiency about 16%. Top cell was grown by using a photo-CVD system which gave an ion damage free and good p/i-a-Si;H layer interface. The heterojunction interface effect was examinded with three differnt surface states; a chemical passivation, thermal oxide passivation, and Yb metal. The oxide passivated cell exhibited the higher photocurrent genration and better spectral response. |
| 키워드(Keyword) |
Energy conversion materials
H/poly-Si
Solar Cells
Heterojunction
|
| 파일첨부 |
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