JICCE (한국정보통신학회)
Current Result Document :
| 한글제목(Korean Title) |
Low Noise and High Linearity GaAs LNA MMIC with Novel Active Bias Circuit for LTE Applications |
| 영문제목(English Title) |
Low Noise and High Linearity GaAs LNA MMIC with Novel Active Bias Circuit for LTE Applications |
| 저자(Author) |
Keun-Kwan Ryu
Yong-Hwan Kim
Sung-Chan Kim
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| 원문수록처(Citation) |
VOL 15 NO. 02 PP. 0112 ~ 0116 (2017. 06) |
한글내용
(Korean Abstract) |
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영문내용
(English Abstract) |
In this work, we demonstrated a low noise and high linearity low amplifier (LNA) monolithic microwave integrated circuit (MMIC) with novel active bias circuit for LTE applications. The device technology used in this work relies on a process involving a 0.25-㎛ GaAs pseudomorphic high electron mobility transistor (PHEMT). The LNA MMIC with a novel active bias circuit has a small signal gain of 19.7±1.5 dB and output third order intercept poing (OIP3) of 38-39 dBm in the frequency range 1.75-2.65 GHz. The noise figure (NF) is less than 0.58 dB over the full bandwidth. Compared with the characteristics of the LNA MMIC without using the novel active bias circuit, the OIP3 is improved about 2-3 dBm. The small signal gain and NF showed no significant change after using the active bias circuit. The novel active bias circuit indeed improves the linearity performance of the LNA MMIC without degradation.
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| 키워드(Keyword) |
Active bias circuit
GaAs
Low noise amplifier
MMIC
PHEMT
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| 파일첨부 |
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