2008년 추계학술대회
Current Result Document :
| 한글제목(Korean Title) |
High-Q Factor ZnO-based Film Bulk Acoustic Resonator Devices |
| 영문제목(English Title) |
High-Q Factor ZnO-based Film Bulk Acoustic Resonator Devices |
| 저자(Author) |
Giwan Yoon
Linh Mai
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| 원문수록처(Citation) |
VOL 12 NO. 02 PP. 0061 ~ 0065 (2008. 10) |
한글내용
(Korean Abstract) |
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영문내용
(English Abstract) |
In this paper, we studied a ZnO-based film bulk acoustic resonator (FBAR) device fabricated on a specially designed multi-layerd Bragg reflector part. Very thin chromium adhesion layers (0,03um thick) were additionally deposited to improve the quality of the Bragg reflector and some thermal treatments were performed to improve the resonant characteristics of the device. At the operating frequency of ~2.7GHz, excellent resonant characteristics were observed in terms of return loss and quality factor, and effective electromechanical coupling coefficient. These findings are expected to be highly promising and effective for improving the performance of the FBAR devices at high frequency.
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| 키워드(Keyword) |
Resonator
FBAR device
Thermal annealing
Adhesion
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| 파일첨부 |
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