JICCE (한국정보통신학회)
Current Result Document :
| 한글제목(Korean Title) |
Etch Rate of Oxide Grown on Silicon Implanted with Different Ion Implantation Conditions prior to Oxidation |
| 영문제목(English Title) |
Etch Rate of Oxide Grown on Silicon Implanted with Different Ion Implantation Conditions prior to Oxidation |
| 저자(Author) |
Yang-Hee Joung
Seong-Jun Kang
|
| 원문수록처(Citation) |
VOL 01 NO. 02 PP. 0067 ~ 0069 (2003. 06) |
한글내용
(Korean Abstract) |
|
영문내용
(English Abstract) |
The experimental studies for the etch properties of the oxide grown on silicon substrate, which is in diluted hydrogen fluoride (HF) solution, are presented. Using different ion implantation dosages, dopants and energies, silicon substrate was implanted. The wet etching in diluted HF solution is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the wet etch rate of oxide grown on various implanted silicon substrates is a strong function of ion implantation dopants, dosages and energies. This phenomenon has never been reported before. This paper shows that the difference of wet etch rate of oxide by ion implantation conditions is attributed to the kinds and volumes of dopants which was diffused out into $SiO₂ from implanted silicon during thermal oxidation. |
| 키워드(Keyword) |
dopant
dosage
ion implantation
energy
dilute HF solution
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| 파일첨부 |
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